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d a t a sh eet product speci?cation supersedes data of 1998 sep 09 file under integrated circuits, ic01 1999 aug 19 integrated circuits TZA1015 data amplifier and laser supply circuit for cd and read-only optical systems (hdalas)
1999 aug 19 2 philips semiconductors product speci?cation data ampli?er and laser supply circuit for cd and read-only optical systems (hdalas) TZA1015 features six input buffer amplifiers with low-pass filtering and virtually no offset universal photodiode ic interface using internal conversion resistors rf data amplifier with wide bandwidth designed for data rates up to a maximum of 30 programmable rf gain for cd-a/v, cd-r, cd-r/w and cd-rom applications programmable rf bandwidth for optimal playability radial error signal for fast track counting programmable rf/fast track count (ftc) gain for optimal dynamic range fully automatic laser control including stabilization and on/off switch plus a separate supply for power efficiency automatic monitor diode polarity selection adjustable laser bandwidth and laser switch-on current slope using external capacitor protection circuit to prevent laser damage due to supply voltage dip optimized interconnection between data amplifier and philips digital signal processor family (cd7, ace and mace) wide supply voltage range wide temperature range low power consumption. general description the TZA1015 is a data amplifier and laser supply circuit for 3-beam pick-up detectors found in a wide range of cd and read-only optical systems. the device contains 6 transimpedance amplifiers to amplify and filter the focus and radial photo diode voltage input signals. the preamplifier forms a versatile, programmable interface from voltage output cd mechanisms to the philips digital signal processor family. the dynamic range of this preamplifier/processor combination can be optimized for the lf servo and rf data paths. the servo channel gain is set by the adc range of the processor. the rf data channel can be programmed in the TZA1015 preamplifier. the programmable rf bandwidth allows this device to be used in cd-a/v applications or cd-r, cd-r/w and cd-rom applications with a data rate up to a maximum of 30 . the rf and lf gain can be adapted for cd-a/v, cd-r and cd-rom discs or cd-r/w discs by means of a gain switch. in addition to this gain switch the rf gain is programmable to guarantee optimal playability. in order to enable minimal access time the TZA1015 generates a fast track count signal which enables the decoder (ace or mace) to count the number of tracks during a track jump. the device can accommodate astigmatic, single foucault and double foucault detectors and can be used with all laser and n- or p-sub monitor diodes. the automatic laser power control (alpc) circuit will maintain control over the laser diode current. with an on-chip reference voltage generator, a constant and stabilized output power is ensured independent of ageing. a separate power supply connection allows the internal power dissipation to be reduced by connecting a low voltage supply. ordering information type number package name description version TZA1015t so28 plastic small outline package; 28 leads; body width 7.5 mm sot136-1
1999 aug 19 3 philips semiconductors product speci?cation data ampli?er and laser supply circuit for cd and read-only optical systems (hdalas) TZA1015 quick reference data symbol parameter conditions min. typ. max. unit supply v dd(rf,lf) supply voltage 4.5 5.0 5.5 v v dd(l) laser supply voltage 3 - 5.5 v lf ampli?ers i os channel matching -- 1 %fs b ( - 3db) - 3 db bandwidth 65 90 115 khz rf ampli?er b ( - 3db) - 3 db bandwidth programmable; garf = open-circuit - 10 - mhz - 20 - mhz - 50 - mhz t d(f)(rf) rf ?atness delay -- 0.4 ns laser supply i o(laser)(min) minimum laser output current v dd(l) =3v -- 100 ma v i(mon) monitor input voltage n-type monitor - 0.150 - v p-type monitor - v dd(rf,lf) - 0.150 - v temperature range t oper operating temperature 0 - 85 c t stg storage temperature - 65 - +150 c
1999 aug 19 4 philips semiconductors product speci?cation data ampli?er and laser supply circuit for cd and read-only optical systems (hdalas) TZA1015 block diagram fig.1 block diagram. (1) bandgap reference voltage. handbook, full pagewidth mgk356 v/i v/i v/i + + + - + + + + - + - + - + - + - + - + ld v dd(l) cfil v dd(lf) v dd(lf) v ref rfn rfp v dd(rf) o1 o2 o3 o4 o5 o6 gnd pwron ftc 2 3 4 12 26 25 24 23 22 21 20 19 18 17 16 15 14 TZA1015 v gap rfbws mon d1 d2 d3 d4 s5 s6 v com garf gse 1 5 6 7 8 9 10 11 13 28 27 (1)
1999 aug 19 5 philips semiconductors product speci?cation data ampli?er and laser supply circuit for cd and read-only optical systems (hdalas) TZA1015 pinning symbol pin description rfbws 1 rf ampli?er bandwidth select ld 2 current output to the laser diode v dd(l) 3 laser supply voltage cfil 4 external ?lter capacitor mon 5 laser monitor diode input d1 6 input photo diode ampli?er 1 (central) d2 7 input photo diode ampli?er 2 (central) d3 8 input photo diode ampli?er 3 (central) d4 9 input photo diode ampli?er 4 (central) s5 10 input photo diode ampli?er 5 (satellite) s6 11 input photo diode ampli?er 6 (satellite) v dd(lf) 12 lf diode and ftc ampli?er supply voltage v com 13 common mode dc reference input v ref 14 dc reference voltage for biasing of opto electronic ic (oeic) ftc 15 fast track count ampli?er output pwron 16 power on/off switch (v ref bias generator always active) o6 17 output photo diode ampli?er 6 o5 18 output photo diode ampli?er 5 o4 19 output photo diode ampli?er 4 o3 20 output photo diode ampli?er 3 o2 21 output photo diode ampli?er 2 o1 22 output photo diode ampli?er 1 v dd(rf) 23 rf ampli?er supply voltage gnd 24 ground rfp 25 positive output rf data ampli?er rfn 26 negative output rf data ampli?er gse 27 gain select for cd, cd-r, cd-r/w; rf and ftc ampli?ers garf 28 gain adjust for rf and ftc ampli?ers fig.2 pin configuration. handbook, halfpage rfbws ld v dd(l) cfil mon d1 d2 d3 d4 s5 s6 v dd(lf) v com v ref garf gse rfn rfp v dd(rf) o1 o2 o3 o4 o5 o6 gnd pwron ftc 1 2 3 4 5 6 7 8 9 10 11 12 13 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 TZA1015 mgk355
1999 aug 19 6 philips semiconductors product speci?cation data ampli?er and laser supply circuit for cd and read-only optical systems (hdalas) TZA1015 limiting values in accordance with the absolute maximum rating system (iec 134). note 1. based on standard measurement for determining thermal resistance of the package. in accordance with mil-std 883c. characteristics v dd(lf) =v dd(rf) =v dd(l) = 5.0 v; t amb =25 c; pwron = high; gse = low; garf = open-circuit; rfbws = high; dc input voltages at pins v com , d1 to d4, s5 and s6 = 1 2 v dd ; output voltage at pins o1 to o6 = 0 v; i dd(l)(d) = 50 ma; c cfil = 1 nf; unless otherwise speci?ed. diode input voltages all with respect to v com . symbol parameter conditions min. max. unit v dd(rf,lf) supply voltage - 0.5 +5.5 v v i(n) input voltage for all pins - 0.5 v dd(rf,lf) + 0.5 v i source source current pin ftc - 4ma pin rfp - 2ma pin rfn - 2ma t amb operating ambient temperature - 40 +100 c p max maximum power dissipation note 1 - 700 mw symbol parameter conditions min. typ. max. unit supplies v dd(rf,lf) supply voltage 4.5 5.0 5.5 v v dd(l) laser supply voltage 3 - 5.5 v i dd(lf) lf supply current - 13 - ma i dd(rf) rf supply current - 20 - ma i dd(l)(d) laser diode supply current - 50 100 ma i q quiescent supply current pwron = low -- 6ma input voltages v i(d1-d4,s5,s6) input signal voltage range (with respect to v com ) all inputs; gse = low 0 - 0.6 v all inputs; gse = high 0 - 0.15 v v i(cm) common mode dc reference input voltage range 1.6 - v dd(rf,lf) - 2.2 v
1999 aug 19 7 philips semiconductors product speci?cation data ampli?er and laser supply circuit for cd and read-only optical systems (hdalas) TZA1015 lf diode ampli?ers z conv conversion impedance central diodes, d1 to d4 gse = low 40 47 54 k w gse = high 10.5 12.5 15.0 k w satellite diodes, s5 and s6 gse = low 75 92 106 k w gse = high 20.5 24.5 28 k w i o(lf) output current range note 1 central diodes, o1 to o4 0 - 12 m a satellite diodes, o5 and o6 0 - 6 m a v o(lf) dc output voltage range central and satellite diodes - 0.2 - v dd(rf,lf) - 2.1 v z i input impedance central diodes - 3.1 - pf satellite diodes - 3.1 - pf i os channel pair matching note 2 central diodes, o1 to o4 - 1 - +1 %fs satellite diodes, o5 and o6 - 2 - +2 %fs b ( - 3db) - 3 db bandwidth central diodes, d1 to d4 65 90 115 khz satellite diodes, s5 and s6 65 90 115 khz rf ampli?er v o(rfp) dc output level rfp gse = low or high; v i(d1 to d4) =0v 0.25 0.5 0.7 v v o(rfn) dc output level rfn gse = low or high; v i(d1 to d4) =0v 2.6 3.1 3.4 v v o(rf)(dif) differential rf output signal (v o(rfp) - v o(rfn) ) note 3 - 2 - v v o(rf) single-sided rf output signal note 3 - 1 - v z o(rf) rf output impedance - 25 -w symbol parameter conditions min. typ. max. unit
1999 aug 19 8 philips semiconductors product speci?cation data ampli?er and laser supply circuit for cd and read-only optical systems (hdalas) TZA1015 g rf rf path gain note 4 gse = low 9 10.5 12 db gse = high 21 22.5 24 db t d(f)(rf) rf ?atness delay gse = low or high; note 5 f < 5 mhz; rfbws = low -- 2.0 ns f < 10 mhz; rfbws = open-circuit -- 1.0 ns f < 25 mhz; rfbws = high -- 0.4 ns b rf( - 3db) - 3 db bandwidth (rf signal) gse = low or high rfbws = low - 10 - mhz rfbws = open-circuit - 20 - mhz rfbws = high - 50 - mhz v n(in-band)(rms) in-band noise (rms value) rfbws = low - 1.0 - mv rfbws = open-circuit - 1.4 - mv rfbws = high - 2.1 - mv v o(ftc) fast track count dc output level gse = low or high; note 6 1.3 1.5 1.7 v g ftc fast track count gain f = 100 khz; note 7 gse = low 16.5 18 19.5 db gse = high 26.5 28 29.5 db b ftc( - 3db) fast track count - 3 db bandwidth 220 300 380 khz laser supply (apc) i o(laser)(min) minimum laser output current -- 100 ma v i(mon) monitor input voltage n-type - 10% 0.150 +13.5% v p-type - v dd(rf,lf) - 0.150 - v v o(laser) laser output voltage range i o(laser) = 100 ma -- v dd(l) - 1.2 v t sw(on)(laser) laser switch-on time - 3 - ms i i(mon) monitor input current -- 100 na symbol parameter conditions min. typ. max. unit
1999 aug 19 9 philips semiconductors product speci?cation data ampli?er and laser supply circuit for cd and read-only optical systems (hdalas) TZA1015 control inputs z i(pd) pull-down input impedance (pin gse) - 150 - k w z i(pu) pull-up input impedance (pin pwron) - 150 - k w v il low-level input voltage pins gse and pwron - 0.2 - v pins garf and rfbws - 0.2 - +0.5 v v ih high-level input voltage pins gse and pwron - v dd(rf,lf) + 0.2 v pins garf and rfbws v dd(rf,lf) - 0.5 - v dd(rf,lf) + 0.2 v i il low-level input current (pins garf and rfbws) -- - 70 m a i ih high-level input current (pins garf and rfbws) -- 80 m a v ref voltage source v o dc output voltage - 10% +10% v i o output current range sink 1.5 -- ma source -- - 3ma z o dc output impedance -- 30 w symbol parameter conditions min. typ. max. unit v dd(rf,lf) 3.3 -------------------------- v dd(rf,lf) 1.4 -------------------------- v dd(rf,lf) 2 ------------------------- -
1999 aug 19 10 philips semiconductors product speci?cation data ampli?er and laser supply circuit for cd and read-only optical systems (hdalas) TZA1015 notes 1. the output current can be increased but does not match the default input range of the servo system. 2. matching defined in % of fs output per channel pairs (o1 - o2), (o3 - o4), (s5 - s6), at 1 3 and 2 3 of full output scale. 3. v o(rfp) =v o(rf) ; v o(rfn) = - v o(rf) . 4. gain is defined as: all inputs assumed to be equal: , where i=1to4 and d means diode. 5. see figs 3, 4 and 5. 6. voltage is based on 2 pn junctions and is temperature dependent. 7. gain is defined as: g rf 20 v orfp () v ilf () ------------------- - log 20 v orfn () v ilf () -------------------- log == v i(lf) s v i(d) 4 --------------- = g ftc 20 v oftc () v is5 () v is6 () C () ---------------------------------------- - log = fig.3 gain and delay for 50 mhz bandwidth. definition of delay: delay j 360 --------- - ? ?? f --------------- = (1) gain. (2) delay. handbook, halfpage 12 7 10 - 1 1 10 f (mhz) 10 2 mgk357 8 9 10 11 9.00 7.75 8.00 8.25 8.50 8.75 g (db) t d (ns) (1) (2) fig.4 gain and delay for 20 mhz bandwidth. definition of delay: delay j 360 --------- - ? ?? f --------------- = (1) gain. (2) delay. handbook, halfpage 12 7 10 - 1 1 10 f (mhz) 10 2 mgk358 8 9 10 11 14.5 12.0 12.5 13.0 13.5 14.0 g (db) t d (ns) (1) (2)
1999 aug 19 11 philips semiconductors product speci?cation data ampli?er and laser supply circuit for cd and read-only optical systems (hdalas) TZA1015 table 1 control inputs, conversion impedances and gain settings table 2 control inputs and rf bandwidth pin gse pin garf nominal lf v/i conversion (central diodes) nominal lf v/i conversion (satellite diodes) nominal rf gain (db) nominal ftc gain (db) low low 47 k w 92 k w 7 14 low open-circuit 47 k w 92 k w 10.5 18 low high 47 k w 92 k w 15 22 high low 12.5 k w 24.5 k w 19 24 high open-circuit 12.5 k w 24.5 k w 22.5 28 high high 12.5 k w 24.5 k w 27 32 pin rfbws rf amplifier bandwidth low 10 mhz open-circuit 20 mhz high 50 mhz fig.5 gain and delay for 10 mhz bandwidth. definition of delay: delay j 360 --------- - ? ?? f --------------- = (1) gain. (2) delay. handbook, halfpage 12 7 10 - 1 1 10 f (mhz) 10 2 mgk359 8 9 10 11 23 13 15 17 19 21 g (db) t d (ns) (1) (2)
1999 aug 19 12 philips semiconductors product speci?cation data ampli?er and laser supply circuit for cd and read-only optical systems (hdalas) TZA1015 application information the circuits shown in figs 6 and 7 are applications for the TZA1015 (hdalas) with the saa7370a (cd7) or the saa7348 (ace). handbook, full pagewidth 22 k w rfbws ld v dd(l) cfil mon d1 d2 d3 d4 s5 s6 v dd(lf) v dd(rf, lf) v com v ref ld mon d1 d2 d3 d4 s5 s6 v ref garf gse rfn rfp v dd(rf) o1 o2 o3 o4 o5 o6 gnd pwron ftc 1 2 3 4 5 6 7 8 9 10 11 12 13 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 TZA1015 (hdalas) mgk360 islice i ref hfin hfref d1 d2 d3 d4 r1 r2 ldon 6 220 pf v rl 14 18 15 17 3 4 5 7 8 9 64 6 saa7370a (cd7) 100 nf 100 nf 1 nf 1 nf 100 nf r1 (2) c1 (2) 100 nf v dd(rf, lf) v dd(laser) 100 nf 1 nf opic r2 (2) 22 k w 100 nf from microprocessor (1) from microprocessor (1) to microprocessor (3) fig.6 application diagram with saa7370a (cd7). (1) pins rfbws, garf and gse can be microprocessor controlled but can also be fixed or switched by any other means. (2) for recommended values per speed see table 3. (3) the ftc output is available for optional processing.
1999 aug 19 13 philips semiconductors product speci?cation data ampli?er and laser supply circuit for cd and read-only optical systems (hdalas) TZA1015 fig.7 application diagram with saa7348 (ace). (1) pins rfbws, garf and gse can be microprocessor controlled but can also be fixed or switched by any other means. (2) for recommended values per speed see table 4. handbook, full pagewidth 47 k w 5 pf 22 nf rfbws ld v dd(l) cfil mon d1 d2 d3 d4 s5 s6 v dd(lf) v dd(rf, lf) v com v ref ld mon d1 d2 d3 d4 s5 s6 v ref garf gse rfn rfp v dd(rf) o1 o2 o3 o4 o5 o6 gnd pwron ftc 1 2 3 4 5 6 7 8 9 10 11 12 13 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 TZA1015 (hdalas) mgk361 hfin d1 d2 d3 d4 s1 s2 ldon ftc h from microprocessor (1) from microprocessor (1) 9 15 16 17 20 21 22 100 24 ftc l 25 saa7348 (ace) 100 nf 100 nf 1 nf 68 nf r1 (2) c1 (2) 100 nf v dd(rf, lf) v dd(laser) 100 nf opic table 3 recommended values of components per speed for application diagram of fig.6 table 4 recommended values of components per speed for application diagram of fig.7 n c1r1r2 1 47 pf 1 k w 1k w 2 47 pf 470 w 470 w 4 22 pf 470 w 470 w 8 10 pf 470 w 470 w 10 8.2 pf 470 w 470 w nc1r1 1 100 pf 1 k w 2 47 pf 1 k w 4 22 pf 1 k w 8 22 pf 470 w 16 10 pf 470 w 18 6.8 pf 470 w
1999 aug 19 14 philips semiconductors product speci?cation data ampli?er and laser supply circuit for cd and read-only optical systems (hdalas) TZA1015 package outline unit a max. a 1 a 2 a 3 b p cd (1) e (1) (1) eh e ll p q z y w v q references outline version european projection issue date iec jedec eiaj mm inches 2.65 0.30 0.10 2.45 2.25 0.49 0.36 0.32 0.23 18.1 17.7 7.6 7.4 1.27 10.65 10.00 1.1 1.0 0.9 0.4 8 0 o o 0.25 0.1 dimensions (inch dimensions are derived from the original mm dimensions) note 1. plastic or metal protrusions of 0.15 mm maximum per side are not included. 1.1 0.4 sot136-1 x 14 28 w m q a a 1 a 2 b p d h e l p q detail x e z c l v m a e 15 1 (a ) 3 a y 0.25 075e06 ms-013ae pin 1 index 0.10 0.012 0.004 0.096 0.089 0.019 0.014 0.013 0.009 0.71 0.69 0.30 0.29 0.050 1.4 0.055 0.419 0.394 0.043 0.039 0.035 0.016 0.01 0.25 0.01 0.004 0.043 0.016 0.01 0 5 10 mm scale so28: plastic small outline package; 28 leads; body width 7.5 mm sot136-1 95-01-24 97-05-22
1999 aug 19 15 philips semiconductors product speci?cation data ampli?er and laser supply circuit for cd and read-only optical systems (hdalas) TZA1015 soldering introduction there is no soldering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. however, wave soldering is not always suitable for surface mounted ics, or for printed-circuits with high population densities. in these situations reflow soldering is often used. this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our data handbook ic26; integrated circuit packages (order code 9398 652 90011). re?ow soldering reflow soldering techniques are suitable for all so packages. reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. several techniques exist for reflowing; for example, thermal conduction by heated belt. dwell times vary between 50 and 300 seconds depending on heating method. typical reflow temperatures range from 215 to 250 c. preheating is necessary to dry the paste and evaporate the binding agent. preheating duration: 45 minutes at 45 c. wave soldering wave soldering techniques can be used for all so packages if the following conditions are observed: a double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. the longitudinal axis of the package footprint must be parallel to the solder flow. the package footprint must incorporate solder thieves at the downstream end. during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. maximum permissible solder temperature is 260 c, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 c within 6 seconds. typical dwell time is 4 seconds at 250 c. a mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. repairing soldered joints fix the component by first soldering two diagonally- opposite end leads. use only a low voltage soldering iron (less than 24 v) applied to the flat part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c.
1999 aug 19 16 philips semiconductors product speci?cation data ampli?er and laser supply circuit for cd and read-only optical systems (hdalas) TZA1015 definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
1999 aug 19 17 philips semiconductors product speci?cation data ampli?er and laser supply circuit for cd and read-only optical systems (hdalas) TZA1015 notes
1999 aug 19 18 philips semiconductors product speci?cation data ampli?er and laser supply circuit for cd and read-only optical systems (hdalas) TZA1015 notes
1999 aug 19 19 philips semiconductors product speci?cation data ampli?er and laser supply circuit for cd and read-only optical systems (hdalas) TZA1015 notes
? philips electronics n.v. sca all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. internet: http://www.semiconductors.philips.com 1999 67 philips semiconductors C a worldwide company for all other countries apply to: philips semiconductors, international marketing & sales communications, building be-p, p.o. box 218, 5600 md eindhoven, the netherlands, fax. +31 40 27 24825 argentina: see south america australia: 3 figtree drive, homebush, nsw 2140, tel. +61 2 9704 8141, fax. +61 2 9704 8139 austria: computerstr. 6, a-1101 wien, p.o. box 213, tel. +43 1 60 101 1248, fax. +43 1 60 101 1210 belarus: hotel minsk business center, bld. 3, r. 1211, volodarski str. 6, 220050 minsk, tel. +375 172 20 0733, fax. +375 172 20 0773 belgium: see the netherlands brazil: see south america bulgaria: philips bulgaria ltd., energoproject, 15th floor, 51 james bourchier blvd., 1407 sofia, tel. +359 2 68 9211, fax. +359 2 68 9102 canada: philips semiconductors/components, tel. +1 800 234 7381, fax. +1 800 943 0087 china/hong kong: 501 hong kong industrial technology centre, 72 tat chee avenue, kowloon tong, hong kong, tel. +852 2319 7888, fax. +852 2319 7700 colombia: see south america czech republic: see austria denmark: sydhavnsgade 23, 1780 copenhagen v, tel. +45 33 29 3333, fax. +45 33 29 3905 finland: sinikalliontie 3, fin-02630 espoo, tel. +358 9 615 800, fax. +358 9 6158 0920 france: 51 rue carnot, bp317, 92156 suresnes cedex, tel. +33 1 4099 6161, fax. +33 1 4099 6427 germany: hammerbrookstra?e 69, d-20097 hamburg, tel. +49 40 2353 60, fax. +49 40 2353 6300 hungary: see austria india: philips india ltd, band box building, 2nd floor, 254-d, dr. annie besant road, worli, mumbai 400 025, tel. +91 22 493 8541, fax. +91 22 493 0966 indonesia: pt philips development corporation, semiconductors division, gedung philips, jl. buncit raya kav.99-100, jakarta 12510, tel. +62 21 794 0040 ext. 2501, fax. +62 21 794 0080 ireland: newstead, clonskeagh, dublin 14, tel. +353 1 7640 000, fax. +353 1 7640 200 israel: rapac electronics, 7 kehilat saloniki st, po box 18053, tel aviv 61180, tel. +972 3 645 0444, fax. +972 3 649 1007 italy: philips semiconductors, via casati, 23 - 20052 monza (mi), tel. +39 039 203 6838, fax +39 039 203 6800 japan: philips bldg 13-37, kohnan 2-chome, minato-ku, tokyo 108-8507, tel. +81 3 3740 5130, fax. +81 3 3740 5057 korea: philips house, 260-199 itaewon-dong, yongsan-ku, seoul, tel. +82 2 709 1412, fax. +82 2 709 1415 malaysia: no. 76 jalan universiti, 46200 petaling jaya, selangor, tel. +60 3 750 5214, fax. +60 3 757 4880 mexico: 5900 gateway east, suite 200, el paso, texas 79905, tel. +9-5 800 234 7381, fax +9-5 800 943 0087 middle east: see italy netherlands: postbus 90050, 5600 pb eindhoven, bldg. vb, tel. +31 40 27 82785, fax. +31 40 27 88399 new zealand: 2 wagener place, c.p.o. box 1041, auckland, tel. +64 9 849 4160, fax. +64 9 849 7811 norway: box 1, manglerud 0612, oslo, tel. +47 22 74 8000, fax. +47 22 74 8341 pakistan: see singapore philippines: philips semiconductors philippines inc., 106 valero st. salcedo village, p.o. box 2108 mcc, makati, metro manila, tel. +63 2 816 6380, fax. +63 2 817 3474 poland: ul. lukiska 10, pl 04-123 warszawa, tel. +48 22 612 2831, fax. +48 22 612 2327 portugal: see spain romania: see italy russia: philips russia, ul. usatcheva 35a, 119048 moscow, tel. +7 095 755 6918, fax. +7 095 755 6919 singapore: lorong 1, toa payoh, singapore 319762, tel. +65 350 2538, fax. +65 251 6500 slovakia: see austria slovenia: see italy south africa: s.a. philips pty ltd., 195-215 main road martindale, 2092 johannesburg, p.o. box 58088 newville 2114, tel. +27 11 471 5401, fax. +27 11 471 5398 south america: al. vicente pinzon, 173, 6th floor, 04547-130 s?o paulo, sp, brazil, tel. +55 11 821 2333, fax. +55 11 821 2382 spain: balmes 22, 08007 barcelona, tel. +34 93 301 6312, fax. +34 93 301 4107 sweden: kottbygatan 7, akalla, s-16485 stockholm, tel. +46 8 5985 2000, fax. +46 8 5985 2745 switzerland: allmendstrasse 140, ch-8027 zrich, tel. +41 1 488 2741 fax. +41 1 488 3263 taiwan: philips semiconductors, 6f, no. 96, chien kuo n. rd., sec. 1, taipei, taiwan tel. +886 2 2134 2886, fax. +886 2 2134 2874 thailand: philips electronics (thailand) ltd., 209/2 sanpavuth-bangna road prakanong, bangkok 10260, tel. +66 2 745 4090, fax. +66 2 398 0793 turkey: yukari dudullu, org. san. blg., 2.cad. nr. 28 81260 umraniye, istanbul, tel. +90 216 522 1500, fax. +90 216 522 1813 ukraine : philips ukraine, 4 patrice lumumba str., building b, floor 7, 252042 kiev, tel. +380 44 264 2776, fax. +380 44 268 0461 united kingdom: philips semiconductors ltd., 276 bath road, hayes, middlesex ub3 5bx, tel. +44 208 730 5000, fax. +44 208 754 8421 united states: 811 east arques avenue, sunnyvale, ca 94088-3409, tel. +1 800 234 7381, fax. +1 800 943 0087 uruguay: see south america vietnam: see singapore yugoslavia: philips, trg n. pasica 5/v, 11000 beograd, tel. +381 11 62 5344, fax.+381 11 63 5777 printed in the netherlands 545002/03/pp 20 date of release: 1999 aug 19 document order number: 9397 750 06271

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